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| MAC8D, MAC8M, MAC8N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. * Blocking Voltage to 800 Volts * On-State Current Rating of 8.0 Amperes RMS at 100C * Uniform Gate Trigger Currents in Three Quadrants * High Immunity to dv/dt -- 250 V/s minimum at 125C * Minimizes Snubber Networks for Protection * Industry Standard TO-220AB Package * High Commutating di/dt -- 6.5 A/ms minimum at 125C * Device Marking: Logo, Device Type, e.g., MAC8D, Date Code http://onsemi.com TRIACS 8 AMPERES RMS 400 thru 800 VOLTS MT2 G MT1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC8D MAC8M MAC8N On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) 8.0 Amps 1 ITSM 80 Amps Value Unit Volts 4 2 3 I2t PGM PG(AV) TJ Tstg 26 16 0.35 - 40 to +125 - 40 to +150 A2sec Watts 1 Watt C C 2 3 4 TO-220AB CASE 221A STYLE 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION Device MAC8D MAC8M MAC8N Package TO220AB TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 1999 1 January, 2000 - Rev. 1 Publication Order Number: MAC8D/D MAC8D, MAC8M, MAC8N THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Value 2.2 62.5 260 Unit C/W C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 125C IDRM, IRRM mA -- -- -- -- 0.01 2.0 ON CHARACTERISTICS Peak On-State Voltage* (ITM = 11 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA) Latching Current (VD = 24 V, IG = 35 mA) MT2(+), G(+); MT2(-), G(-) MT2(+), G(-) Gate Trigger Voltage (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Non-Trigger Voltage (VD = 12 V, RL = 100 , TJ = 125C) MT2(+), G(+); MT2(+), G(-); MT2(-), G(-) VTM IGT 5.0 5.0 5.0 IH IL -- -- VGT 0.5 0.5 0.5 VGD 0.2 -- -- 0.69 0.77 0.72 1.5 1.5 1.5 Volts 20 30 50 80 Volts -- 13 16 18 20 35 35 35 40 mA mA -- 1.2 1.6 Volts mA DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current See Figure 10. (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/s, Gate Open, TJ = 125C, f = 250 Hz, No Snubber) CL = 10 F LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (di/dt)c 6.5 -- -- A/ms dv/dt 250 -- -- V/s http://onsemi.com 2 MAC8D, MAC8M, MAC8N Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 - IRRM at VRRM on state VTM IH off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT - (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC8D, MAC8M, MAC8N 125 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (C) 120 = 120, 90, 60, 30 115 = 180 110 DC 105 12 DC 10 180 8 6 4 90 2 0 = 30 60 120 100 0 1 3 4 5 6 IT(RMS), RMS ON-STATE CURRENT (AMP) 2 7 8 0 1 2 3 4 5 6 IT(RMS), ON-STATE CURRENT (AMP) 7 8 Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 1 TYPICAL AT TJ = 25C MAXIMUM @ TJ = 125C 0.1 I T, INSTANTANEOUS ON-STATE CURRENT (AMP) 10 0.01 0.1 1 10 100 t, TIME (ms) 1000 1 * 104 Figure 4. Thermal Response MAXIMUM @ TJ = 25C 1 40 35 I H, HOLD CURRENT (mA) 30 MT2 POSITIVE 25 20 15 MT2 NEGATIVE 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5 5 - 50 - 30 - 10 30 50 70 10 90 TJ, JUNCTION TEMPERATURE (C) 110 130 Figure 3. On-State Characteristics http://onsemi.com 4 Figure 5. Hold Current Variation MAC8D, MAC8M, MAC8N 100 Q2 Q3 Q1 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 1 0.95 0.9 0.85 0.8 075 0.7 0.65 0.6 0.55 0.5 0.45 0.4 - 50 Q2 Q3 10 Q1 1 - 50 - 30 - 10 10 50 90 30 70 TJ, JUNCTION TEMPERATURE (C) 110 130 - 30 - 10 10 50 70 30 90 TJ, JUNCTION TEMPERATURE (C) 110 130 Figure 6. Gate Trigger Current Variation dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/ s) Figure 7. Gate Trigger Voltage Variation 5000 4.5K 4K 3.5K 3K 2.5K 2K 1.5K 1K 500 0 1 MT2 POSITIVE 10 100 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 1000 MT2 NEGATIVE 100 (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) TJ = 125C 10 100C 75C tw VDRM f= 1 2 tw 6f I (di/dt)c = TM 1000 1 10 15 20 25 30 35 40 45 50 55 60 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential) Figure 9. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I 1N4007 - + 1N914 51 W MT2 MT1 G CHARGE 200 V NON-POLAR CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 MAC8D, MAC8M, MAC8N PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE Z -T- C T 4 SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 http://onsemi.com 6 MAC8D, MAC8M, MAC8N Notes http://onsemi.com 7 MAC8D, MAC8M, MAC8N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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